Infineon Technologies - FF23MR12W1M1B11BOMA1

KEY Part #: K6522226

FF23MR12W1M1B11BOMA1 Bei (USD) [959pcs Hisa]

  • 1 pcs$48.43225

Nambari ya Sehemu:
FF23MR12W1M1B11BOMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET 2 N-CH 1200V 50A MODULE.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers, Thyristors - TRIAC, Transistors - JFETs, Viwango - Zener - Moja and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Infineon Technologies FF23MR12W1M1B11BOMA1 electronic components. FF23MR12W1M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for FF23MR12W1M1B11BOMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF23MR12W1M1B11BOMA1 Sifa za Bidhaa

Nambari ya Sehemu : FF23MR12W1M1B11BOMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET 2 N-CH 1200V 50A MODULE
Mfululizo : CoolSiC™
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Silicon Carbide (SiC)
Kukata kwa Voltage Voltage (Vdss) : 1200V (1.2kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 50A
Njia ya Kutumia (Max) @ Id, Vgs : 23 mOhm @ 50A, 15V
Vgs (th) (Max) @ Id : 5.55V @ 20mA
Malango ya Lango (Qg) (Max) @ Vgs : 125nC @ 15V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3950pF @ 800V
Nguvu - Max : 20mW
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : Module