IXYS-RF - IXFH12N100F

KEY Part #: K6393664

IXFH12N100F Bei (USD) [10296pcs Hisa]

  • 1 pcs$4.00229

Nambari ya Sehemu:
IXFH12N100F
Mzalishaji:
IXYS-RF
Maelezo ya kina:
MOSFET N-CH 1000V 12A TO-247AD.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
We specialize in IXYS-RF IXFH12N100F electronic components. IXFH12N100F can be shipped within 24 hours after order. If you have any demands for IXFH12N100F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH12N100F Sifa za Bidhaa

Nambari ya Sehemu : IXFH12N100F
Mzalishaji : IXYS-RF
Maelezo : MOSFET N-CH 1000V 12A TO-247AD
Mfululizo : HiPerRF™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.05 Ohm @ 6A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 4mA
Malango ya Lango (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2700pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 300W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-247AD (IXFH)
Kifurushi / Kesi : TO-3P-3 Full Pack

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