Microsemi Corporation - 1N6630US

KEY Part #: K6447697

1N6630US Bei (USD) [3537pcs Hisa]

  • 1 pcs$12.24659
  • 100 pcs$7.55184

Nambari ya Sehemu:
1N6630US
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
DIODE GEN PURP 900V 1.4A D5B. Rectifiers Rectifier
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Viwango - RF, Thyristors - SCRs - Moduli, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - RF, Thyristors - TRIAC, Transistors - JFETs and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6630US Sifa za Bidhaa

Nambari ya Sehemu : 1N6630US
Mzalishaji : Microsemi Corporation
Maelezo : DIODE GEN PURP 900V 1.4A D5B
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 900V
Sasa - Wastani Aliyerekebishwa (Io) : 1.4A
Voltage - Mbele (Vf) (Max) @ Kama : 1.7V @ 3A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 50ns
Sasa - Rejea kuvuja @ Vr : 4µA @ 100V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : E-MELF
Kifurushi cha Kifaa cha Mtoaji : D-5B
Joto la Kufanya kazi - Junction : -65°C ~ 150°C

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