Nambari ya Sehemu :
SCT3160KLGC11
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET NCH 1.2KV 17A TO247N
Teknolojia :
SiCFET (Silicon Carbide)
Kukata kwa Voltage Voltage (Vdss) :
1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
17A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
18V
Njia ya Kutumia (Max) @ Id, Vgs :
208 mOhm @ 5A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs :
42nC @ 18V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
398pF @ 800V
Kuondoa Nguvu (Max) :
103W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247N
Kifurushi / Kesi :
TO-247-3