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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Moja
  5. FDN5618P_G

ON Semiconductor - FDN5618P_G

KEY Part #: K6401154

[3149pcs Hisa]

    Nambari ya Sehemu:
    FDN5618P_G
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    INTEGRATED CIRCUIT.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Viwango - RF, Viwango - Rectifiers - Moja, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - DIAC, SIDAC and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor FDN5618P_G electronic components. FDN5618P_G can be shipped within 24 hours after order. If you have any demands for FDN5618P_G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDN5618P_G Sifa za Bidhaa

    Nambari ya Sehemu : FDN5618P_G
    Mzalishaji : ON Semiconductor
    Maelezo : INTEGRATED CIRCUIT
    Mfululizo : PowerTrench®
    Hali ya Sehemu : Obsolete
    Aina ya FET : P-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 60V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.25A (Ta)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 170 mOhm @ 1.25A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 13.8nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 430pF @ 30V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 500mW (Ta)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : SuperSOT-3
    Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3

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