SI8429DB-T1-E1 Bei (USD) [202426pcs Hisa]
- 1 pcs$0.18363
- 3,000 pcs$0.18272
- Nambari ya Sehemu:
- SI8429DB-T1-E1
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 8V 11.7A 2X2 4-MFP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Moduli, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI8429DB-T1-E1 electronic components. SI8429DB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8429DB-T1-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8429DB-T1-E1 Sifa za Bidhaa
Nambari ya Sehemu :
SI8429DB-T1-E1
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 8V 11.7A 2X2 4-MFP
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
8V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
11.7A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.2V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
35 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
26nC @ 5V
Vgs (Max) :
±5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1640pF @ 4V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.77W (Ta), 6.25W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
4-Microfoot
Kifurushi / Kesi :
4-XFBGA, CSPBGA
Habari mpya kabisa
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