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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  4. Transistors - FET, MOSFETs - Moja
  5. NTMFS6B14NT1G

ON Semiconductor - NTMFS6B14NT1G

KEY Part #: K6397255

NTMFS6B14NT1G Bei (USD) [68577pcs Hisa]

  • 1 pcs$0.57303
  • 1,500 pcs$0.57018
Nambari ya Sehemu:
NTMFS6B14NT1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 100V 10A SO8FL.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF, Viwango - Bridge Rectifiers, Moduli za Dereva za Nguvu, Viwango - RF, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in ON Semiconductor NTMFS6B14NT1G electronic components. NTMFS6B14NT1G can be shipped within 24 hours after order. If you have any demands for NTMFS6B14NT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS6B14NT1G Sifa za Bidhaa

Nambari ya Sehemu : NTMFS6B14NT1G
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 100V 10A SO8FL
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 10A (Ta), 50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 15 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1300pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.1W (Ta), 77W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 5-DFN (5x6) (8-SOFL)
Kifurushi / Kesi : 8-PowerTDFN

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