[12598pcs Hisa]
- Nambari ya Sehemu:
- IRFD010
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 50V 1.7A 4-DIP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCRs - Moduli and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix IRFD010 electronic components. IRFD010 can be shipped within 24 hours after order. If you have any demands for IRFD010, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD010 Sifa za Bidhaa
Nambari ya Sehemu :
IRFD010
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 50V 1.7A 4-DIP
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
50V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.7A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
200 mOhm @ 860mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
250pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
4-DIP, Hexdip, HVMDIP
Kifurushi / Kesi :
4-DIP (0.300", 7.62mm)
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