Vishay Siliconix - SQ4064EY-T1_GE3

KEY Part #: K6403233

SQ4064EY-T1_GE3 Bei (USD) [185930pcs Hisa]

  • 1 pcs$0.19893

Nambari ya Sehemu:
SQ4064EY-T1_GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CHANNEL 60V 12A 8SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moduli, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moja, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SQ4064EY-T1_GE3 electronic components. SQ4064EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4064EY-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ4064EY-T1_GE3 Sifa za Bidhaa

Nambari ya Sehemu : SQ4064EY-T1_GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CHANNEL 60V 12A 8SOIC
Mfululizo : Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 19.8 mOhm @ 6.1A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2096pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 6.8W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SOIC
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)