IXTA3N120HV Bei (USD) [15181pcs Hisa]
- 1 pcs$7.03798
- 10 pcs$6.39896
- 100 pcs$5.43912
- Nambari ya Sehemu:
- IXTA3N120HV
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 1.2KV 3A TO263.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in IXYS IXTA3N120HV electronic components. IXTA3N120HV can be shipped within 24 hours after order. If you have any demands for IXTA3N120HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA3N120HV Sifa za Bidhaa
Nambari ya Sehemu :
IXTA3N120HV
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 1.2KV 3A TO263
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
4.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1100pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
200W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-263
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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