Nambari ya Sehemu :
TK10A80E,S4X
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 800V TO220SIS
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
46nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2000pF @ 25V
Kuondoa Nguvu (Max) :
50W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220SIS
Kifurushi / Kesi :
TO-220-3 Full Pack