Vishay Siliconix - SIB417EDK-T1-GE3

KEY Part #: K6396450

SIB417EDK-T1-GE3 Bei (USD) [211203pcs Hisa]

  • 1 pcs$0.17513
  • 3,000 pcs$0.16445

Nambari ya Sehemu:
SIB417EDK-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CH 8V 9A SC75-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moduli, Transistors - Kusudi Maalum, Viwango - Zener - Arrays, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - RF and Transistors - JFETs ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIB417EDK-T1-GE3 electronic components. SIB417EDK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB417EDK-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIB417EDK-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIB417EDK-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CH 8V 9A SC75-6
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 8V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.2V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 58 mOhm @ 5.8A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 12nC @ 5V
Vgs (Max) : ±5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 565pF @ 4V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.4W (Ta), 13W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SC-75-6L Single
Kifurushi / Kesi : PowerPAK® SC-75-6L

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