Vishay Siliconix - SIHB22N60E-GE3

KEY Part #: K6416805

SIHB22N60E-GE3 Bei (USD) [19855pcs Hisa]

  • 1 pcs$2.00959
  • 10 pcs$1.79365
  • 100 pcs$1.47079
  • 500 pcs$1.19098
  • 1,000 pcs$0.95293

Nambari ya Sehemu:
SIHB22N60E-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 600V 21A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Arrays, Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIHB22N60E-GE3 electronic components. SIHB22N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB22N60E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHB22N60E-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIHB22N60E-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 600V 21A D2PAK
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 21A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 180 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1920pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 227W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D2PAK
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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