CSD25213W10 Bei (USD) [736098pcs Hisa]
- 1 pcs$0.05025
- 3,000 pcs$0.03821
- Nambari ya Sehemu:
- CSD25213W10
- Mzalishaji:
- Texas Instruments
- Maelezo ya kina:
- MOSFET P-CH 20V 1.6A 4DSBGA.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Moduli za Dereva za Nguvu, Thyristors - SCR, Transistors - FET, MOSFETs - RF, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Zener - Arrays and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in Texas Instruments CSD25213W10 electronic components. CSD25213W10 can be shipped within 24 hours after order. If you have any demands for CSD25213W10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD25213W10 Sifa za Bidhaa
Nambari ya Sehemu :
CSD25213W10
Mzalishaji :
Texas Instruments
Maelezo :
MOSFET P-CH 20V 1.6A 4DSBGA
Mfululizo :
NexFET™
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.6A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
47 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
2.9nC @ 4.5V
Vgs (Max) :
-6V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
478pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
4-DSBGA (1x1)
Kifurushi / Kesi :
4-UFBGA, DSBGA
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