Nambari ya Sehemu :
IPU80R1K4P7AKMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 800V 4A IPAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.4 Ohm @ 1.4A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 700µA
Malango ya Lango (Qg) (Max) @ Vgs :
10.05nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
250pF @ 500V
Makala ya FET :
Super Junction
Kuondoa Nguvu (Max) :
32W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO251-3
Kifurushi / Kesi :
TO-251-3 Short Leads, IPak, TO-251AA