Nambari ya Sehemu :
TK8Q65W,S1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 650V 7.8A IPAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
7.8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
670 mOhm @ 3.9A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 300µA
Malango ya Lango (Qg) (Max) @ Vgs :
16nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
570pF @ 300V
Kuondoa Nguvu (Max) :
80W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
I-PAK
Kifurushi / Kesi :
TO-251-3 Stub Leads, IPak