Nexperia USA Inc. - BUK9Y153-100E,115

KEY Part #: K6417029

BUK9Y153-100E,115 Bei (USD) [398488pcs Hisa]

  • 1 pcs$0.09282
  • 1,500 pcs$0.08934

Nambari ya Sehemu:
BUK9Y153-100E,115
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
MOSFET N-CH 100V 9.4A LFPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moja, Transistors - Kusudi Maalum and Viwango - Zener - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUK9Y153-100E,115 Sifa za Bidhaa

Nambari ya Sehemu : BUK9Y153-100E,115
Mzalishaji : Nexperia USA Inc.
Maelezo : MOSFET N-CH 100V 9.4A LFPAK
Mfululizo : Automotive, AEC-Q101, TrenchMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9.4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 5V
Njia ya Kutumia (Max) @ Id, Vgs : 146 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 6.8nC @ 5V
Vgs (Max) : ±10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 716pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 37W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : LFPAK56, Power-SO8
Kifurushi / Kesi : SC-100, SOT-669

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