Taiwan Semiconductor Corporation - TSM850N06CX RFG

KEY Part #: K6417373

TSM850N06CX RFG Bei (USD) [891189pcs Hisa]

  • 1 pcs$0.04150

Nambari ya Sehemu:
TSM850N06CX RFG
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
MOSFET N-CHANNEL 60V 3A SOT23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Moja, Thyristors - DIAC, SIDAC, Viwango - RF and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM850N06CX RFG Sifa za Bidhaa

Nambari ya Sehemu : TSM850N06CX RFG
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : MOSFET N-CHANNEL 60V 3A SOT23
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 85 mOhm @ 2.3A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 9.5nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 529pF @ 30V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.7W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3