TPN14006NH,L1Q Bei (USD) [290438pcs Hisa]
- 1 pcs$0.13576
- 5,000 pcs$0.13508
- Nambari ya Sehemu:
- TPN14006NH,L1Q
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N CH 60V 13A 8TSON-ADV.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moja, Thyristors - DIAC, SIDAC, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Kufika and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TPN14006NH,L1Q electronic components. TPN14006NH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN14006NH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN14006NH,L1Q Sifa za Bidhaa
Nambari ya Sehemu :
TPN14006NH,L1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N CH 60V 13A 8TSON-ADV
Mfululizo :
U-MOSVIII-H
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
13A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
14 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1300pF @ 30V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
700mW (Ta), 30W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-TSON Advance (3.3x3.3)
Kifurushi / Kesi :
8-PowerVDFN
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