[1498pcs Hisa]
- Nambari ya Sehemu:
- SUD50N10-18P-E3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 100V 8.2A TO252.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - JFETs, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Moduli za Dereva za Nguvu, Viwango - Zener - Moja and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SUD50N10-18P-E3 electronic components. SUD50N10-18P-E3 can be shipped within 24 hours after order. If you have any demands for SUD50N10-18P-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUD50N10-18P-E3 Sifa za Bidhaa
Nambari ya Sehemu :
SUD50N10-18P-E3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 100V 8.2A TO252
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8.2A (Ta), 50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
18.5 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
75nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2600pF @ 50V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3W (Ta), 136.4W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-252, (D-Pak)
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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