Nambari ya Sehemu :
RN1309(TE85L,F)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS PREBIAS NPN 0.1W USM
Aina ya Transistor :
NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
47 kOhms
Upinzani - Base ya Emitter (R2) :
22 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
70 @ 10mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
250MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SC-70, SOT-323
Kifurushi cha Kifaa cha Mtoaji :
USM