[3229pcs Hisa]
- Nambari ya Sehemu:
- IXTD1R4N60P 11
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 600V.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - IGBTs - Arrays, Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in IXYS IXTD1R4N60P 11 electronic components. IXTD1R4N60P 11 can be shipped within 24 hours after order. If you have any demands for IXTD1R4N60P 11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD1R4N60P 11 Sifa za Bidhaa
Nambari ya Sehemu :
IXTD1R4N60P 11
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 600V
Mfululizo :
PolarHV™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
9 Ohm @ 700mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 25µA
Malango ya Lango (Qg) (Max) @ Vgs :
5.2nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
140pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
50W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
Die
Kifurushi / Kesi :
Die
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