Toshiba Semiconductor and Storage - SSM6N815R,LF

KEY Part #: K6523154

SSM6N815R,LF Bei (USD) [622023pcs Hisa]

  • 1 pcs$0.05946

Nambari ya Sehemu:
SSM6N815R,LF
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
MOSFET 2N-CH 100V 2A 6TSOPF.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Ushirikiano uliopangwa, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - DIAC, SIDAC and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage SSM6N815R,LF electronic components. SSM6N815R,LF can be shipped within 24 hours after order. If you have any demands for SSM6N815R,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6N815R,LF Sifa za Bidhaa

Nambari ya Sehemu : SSM6N815R,LF
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : MOSFET 2N-CH 100V 2A 6TSOPF
Mfululizo : U-MOSVIII-H
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate, 4V Drive
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2A (Ta)
Njia ya Kutumia (Max) @ Id, Vgs : 103 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs : 3.1nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 290pF @ 15V
Nguvu - Max : 1.8W (Ta)
Joto la Kufanya kazi : 150°C
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-SMD, Flat Leads
Kifurushi cha Kifaa cha Mtoaji : 6-TSOP-F

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