ON Semiconductor - FDC5614P

KEY Part #: K6394034

FDC5614P Bei (USD) [327926pcs Hisa]

  • 1 pcs$0.11336
  • 3,000 pcs$0.11279

Nambari ya Sehemu:
FDC5614P
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET P-CH 60V 3A SSOT-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Transistors - JFETs, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Thyristors - DIAC, SIDAC, Thyristors - SCR and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDC5614P electronic components. FDC5614P can be shipped within 24 hours after order. If you have any demands for FDC5614P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDC5614P Sifa za Bidhaa

Nambari ya Sehemu : FDC5614P
Mzalishaji : ON Semiconductor
Maelezo : MOSFET P-CH 60V 3A SSOT-6
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 105 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 24nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 759pF @ 30V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.6W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SuperSOT™-6
Kifurushi / Kesi : SOT-23-6 Thin, TSOT-23-6

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