Nambari ya Sehemu :
IPI80P04P4L06AKSA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET P-CH TO262-3
Mfululizo :
Automotive, AEC-Q101, OptiMOS™
Hali ya Sehemu :
Obsolete
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
6.7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 150µA
Malango ya Lango (Qg) (Max) @ Vgs :
104nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
6580pF @ 25V
Kuondoa Nguvu (Max) :
88W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO262-3-1
Kifurushi / Kesi :
TO-262-3 Long Leads, I²Pak, TO-262AA