Toshiba Semiconductor and Storage - TPH1R712MD,L1Q

KEY Part #: K6420217

TPH1R712MD,L1Q Bei (USD) [171284pcs Hisa]

  • 1 pcs$0.22679
  • 5,000 pcs$0.22566

Nambari ya Sehemu:
TPH1R712MD,L1Q
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
MOSFET P-CH 20V 60A 8SOP ADV.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Moja, Transistors - Ushirikiano uliopangwa and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage TPH1R712MD,L1Q electronic components. TPH1R712MD,L1Q can be shipped within 24 hours after order. If you have any demands for TPH1R712MD,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPH1R712MD,L1Q Sifa za Bidhaa

Nambari ya Sehemu : TPH1R712MD,L1Q
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : MOSFET P-CH 20V 60A 8SOP ADV
Mfululizo : U-MOSVI
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 60A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 1.7 mOhm @ 30A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 182nC @ 5V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 10900pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 78W (Tc)
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SOP Advance (5x5)
Kifurushi / Kesi : 8-PowerVDFN

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