Nambari ya Sehemu :
TPH1R712MD,L1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET P-CH 20V 60A 8SOP ADV
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
60A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
1.7 mOhm @ 30A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
182nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
10900pF @ 10V
Kuondoa Nguvu (Max) :
78W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SOP Advance (5x5)
Kifurushi / Kesi :
8-PowerVDFN