Nambari ya Sehemu :
NVTFS6H888NTAG
Mzalishaji :
ON Semiconductor
Mfululizo :
Automotive, AEC-Q101
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.7A (Ta), 12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
55 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 15µA
Malango ya Lango (Qg) (Max) @ Vgs :
4.7nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
220pF @ 40V
Kuondoa Nguvu (Max) :
2.9W (Ta), 18W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-WDFN (3.3x3.3)
Kifurushi / Kesi :
8-PowerWDFN