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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl
  5. SMUN5313DW1T3G

ON Semiconductor - SMUN5313DW1T3G

KEY Part #: K6528855

SMUN5313DW1T3G Bei (USD) [1074093pcs Hisa]

  • 1 pcs$0.03461
  • 10,000 pcs$0.03444
Nambari ya Sehemu:
SMUN5313DW1T3G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS NPN/PNP PREBIAS SOT363.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Arrays, Moduli za Dereva za Nguvu and Transistors - JFETs ...
Faida ya Ushindani:
We specialize in ON Semiconductor SMUN5313DW1T3G electronic components. SMUN5313DW1T3G can be shipped within 24 hours after order. If you have any demands for SMUN5313DW1T3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SMUN5313DW1T3G Sifa za Bidhaa

Nambari ya Sehemu : SMUN5313DW1T3G
Mzalishaji : ON Semiconductor
Maelezo : TRANS NPN/PNP PREBIAS SOT363
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : 1 NPN, 1 PNP - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 47 kOhms
Upinzani - Base ya Emitter (R2) : 47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 187mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji : SOT-363

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