Nambari ya Sehemu :
EMF8T2R
Mzalishaji :
Rohm Semiconductor
Maelezo :
TRANS NPN PREBIAS/NPN 0.15W EMT6
Hali ya Sehemu :
Not For New Designs
Aina ya Transistor :
1 NPN Pre-Biased, 1 NPN
Sasa - Mtoza (Ic) (Max) :
100mA, 500mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V, 12V
Upinzani - Msingi (R1) :
47 kOhms
Upinzani - Base ya Emitter (R2) :
47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
68 @ 5mA, 5V / 270 @ 10mA, 2V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
250MHz, 320MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-563, SOT-666
Kifurushi cha Kifaa cha Mtoaji :
EMT6