ON Semiconductor - FQN1N60CBU

KEY Part #: K6407917

[807pcs Hisa]


    Nambari ya Sehemu:
    FQN1N60CBU
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    MOSFET N-CH 600V 0.3A TO-92.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Arrays, Moduli za Dereva za Nguvu, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - Moja, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor FQN1N60CBU electronic components. FQN1N60CBU can be shipped within 24 hours after order. If you have any demands for FQN1N60CBU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQN1N60CBU Sifa za Bidhaa

    Nambari ya Sehemu : FQN1N60CBU
    Mzalishaji : ON Semiconductor
    Maelezo : MOSFET N-CH 600V 0.3A TO-92
    Mfululizo : QFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 600V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 300mA (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 11.5 Ohm @ 150mA, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 6.2nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 170pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 1W (Ta), 3W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : TO-92-3
    Kifurushi / Kesi : TO-226-3, TO-92-3 (TO-226AA)