ON Semiconductor - FQD6N60CTM

KEY Part #: K6407922

[7959pcs Hisa]


    Nambari ya Sehemu:
    FQD6N60CTM
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    MOSFET N-CH 600V 4A DPAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja, Moduli za Dereva za Nguvu, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - IGBTs - Moduli ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor FQD6N60CTM electronic components. FQD6N60CTM can be shipped within 24 hours after order. If you have any demands for FQD6N60CTM, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQD6N60CTM Sifa za Bidhaa

    Nambari ya Sehemu : FQD6N60CTM
    Mzalishaji : ON Semiconductor
    Maelezo : MOSFET N-CH 600V 4A DPAK
    Mfululizo : QFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 600V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 2 Ohm @ 2A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 20nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 810pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 80W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : D-Pak
    Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63