Vishay Siliconix - SISS72DN-T1-GE3

KEY Part #: K6419493

SISS72DN-T1-GE3 Bei (USD) [115015pcs Hisa]

  • 1 pcs$0.32159

Nambari ya Sehemu:
SISS72DN-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 150V.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Moja and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SISS72DN-T1-GE3 electronic components. SISS72DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS72DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISS72DN-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SISS72DN-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 150V
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 150V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7A (Ta), 25.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 42 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 550pF @ 75V
Makala ya FET : -
Kuondoa Nguvu (Max) : 5.1W (Ta), 65.8W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 1212-8S
Kifurushi / Kesi : PowerPAK® 1212-8S

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