Infineon Technologies - IPP80N06S407AKSA2

KEY Part #: K6419127

IPP80N06S407AKSA2 Bei (USD) [92990pcs Hisa]

  • 1 pcs$0.42048
  • 500 pcs$0.32982

Nambari ya Sehemu:
IPP80N06S407AKSA2
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 60V 80A TO220-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - Kusudi Maalum, Viwango - Zener - Arrays, Thyristors - TRIAC, Transistors - JFETs, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP80N06S407AKSA2 Sifa za Bidhaa

Nambari ya Sehemu : IPP80N06S407AKSA2
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 60V 80A TO220-3
Mfululizo : Automotive, AEC-Q101, OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 7.4 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4V @ 40µA
Malango ya Lango (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4500pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 79W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO220-3-1
Kifurushi / Kesi : TO-220-3