[13342pcs Hisa]
- Nambari ya Sehemu:
- NP33N06YDG-E1-AY
- Mzalishaji:
- Renesas Electronics America
- Maelezo ya kina:
- MOSFET N-CH 60V 33A 8HSON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Viwango - Zener - Moja, Transistors - Kusudi Maalum, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - RF and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Renesas Electronics America NP33N06YDG-E1-AY electronic components. NP33N06YDG-E1-AY can be shipped within 24 hours after order. If you have any demands for NP33N06YDG-E1-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NP33N06YDG-E1-AY Sifa za Bidhaa
Nambari ya Sehemu :
NP33N06YDG-E1-AY
Mzalishaji :
Renesas Electronics America
Maelezo :
MOSFET N-CH 60V 33A 8HSON
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
33A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
14 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3900pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1W (Ta), 97W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-HSON
Kifurushi / Kesi :
8-SMD, Flat Lead Exposed Pad
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