Vishay Siliconix - SIE862DF-T1-GE3

KEY Part #: K6405945

[1489pcs Hisa]


    Nambari ya Sehemu:
    SIE862DF-T1-GE3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET N-CH 30V 50A POLARPAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs and Moduli za Dereva za Nguvu ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SIE862DF-T1-GE3 electronic components. SIE862DF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIE862DF-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIE862DF-T1-GE3 Sifa za Bidhaa

    Nambari ya Sehemu : SIE862DF-T1-GE3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET N-CH 30V 50A POLARPAK
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 50A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 3.2 mOhm @ 20A, 10V
    Vgs (th) (Max) @ Id : 2.2V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 75nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 3100pF @ 15V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 5.2W (Ta), 104W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : 10-PolarPAK® (U)
    Kifurushi / Kesi : 10-PolarPAK® (U)