IXTH1N200P3 Bei (USD) [14773pcs Hisa]
- 1 pcs$10.98948
- 10 pcs$9.98875
- 100 pcs$8.49044
- Nambari ya Sehemu:
- IXTH1N200P3
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 2000V 1A TO-247.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Viwango - RF, Thyristors - SCRs - Moduli, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in IXYS IXTH1N200P3 electronic components. IXTH1N200P3 can be shipped within 24 hours after order. If you have any demands for IXTH1N200P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH1N200P3 Sifa za Bidhaa
Nambari ya Sehemu :
IXTH1N200P3
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 2000V 1A TO-247
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
2000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
40 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
23.5nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
646pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
125W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247 (IXTH)
Kifurushi / Kesi :
TO-247-3
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