ON Semiconductor - FQPF19N10

KEY Part #: K6420081

FQPF19N10 Bei (USD) [158011pcs Hisa]

  • 1 pcs$0.23408
  • 1,000 pcs$0.22723

Nambari ya Sehemu:
FQPF19N10
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 100V 13.6A TO-220F.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - RF, Transistors - JFETs, Moduli za Dereva za Nguvu and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
We specialize in ON Semiconductor FQPF19N10 electronic components. FQPF19N10 can be shipped within 24 hours after order. If you have any demands for FQPF19N10, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQPF19N10 Sifa za Bidhaa

Nambari ya Sehemu : FQPF19N10
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 100V 13.6A TO-220F
Mfululizo : QFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 13.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 100 mOhm @ 6.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 780pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 38W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220F
Kifurushi / Kesi : TO-220-3 Full Pack

Unaweza pia Kuvutiwa Na