Diodes Incorporated - DMTH6009LPSQ-13

KEY Part #: K6396413

DMTH6009LPSQ-13 Bei (USD) [212693pcs Hisa]

  • 1 pcs$0.17390

Nambari ya Sehemu:
DMTH6009LPSQ-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET BVDSS 41V-60V POWERDI506.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Moja, Moduli za Dereva za Nguvu, Transistors - JFETs, Transistors - IGBTs - Arrays, Thyristors - SCR and Viwango - Zener - Moja ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMTH6009LPSQ-13 electronic components. DMTH6009LPSQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH6009LPSQ-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH6009LPSQ-13 Sifa za Bidhaa

Nambari ya Sehemu : DMTH6009LPSQ-13
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET BVDSS 41V-60V POWERDI506
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 11.76A (Ta), 89.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 10 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 33.5nC @ 10V
Vgs (Max) : ±16V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1925pF @ 30V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.8W (Ta), 136W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerDI5060-8
Kifurushi / Kesi : 8-PowerTDFN