Nambari ya Sehemu :
TPH2R306NH,L1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N CH 60V 60A SOP ADV
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
60A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
2.3 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
72nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
6100pF @ 30V
Kuondoa Nguvu (Max) :
1.6W (Ta), 78W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SOP Advance (5x5)
Kifurushi / Kesi :
8-PowerVDFN