[13796pcs Hisa]
- Nambari ya Sehemu:
- SI4435DYPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET P-CH 30V 8A 8-SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - RF, Viwango - RF, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - TRIAC, Transistors - FET, MOSFETs - Moja and Transistors - Ushirikiano uliopangwa ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies SI4435DYPBF electronic components. SI4435DYPBF can be shipped within 24 hours after order. If you have any demands for SI4435DYPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4435DYPBF Sifa za Bidhaa
Nambari ya Sehemu :
SI4435DYPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET P-CH 30V 8A 8-SOIC
Mfululizo :
HEXFET®
Hali ya Sehemu :
Discontinued at Digi-Key
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
20 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2320pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.5W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SO
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
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