Nambari ya Sehemu :
IRFD224
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 250V 630MA 4-DIP
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
250V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
630mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.1 Ohm @ 380mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
14nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
260pF @ 25V
Kuondoa Nguvu (Max) :
1W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
4-DIP, Hexdip, HVMDIP
Kifurushi / Kesi :
4-DIP (0.300", 7.62mm)