Vishay Siliconix - IRFD224

KEY Part #: K6392865

IRFD224 Bei (USD) [90300pcs Hisa]

  • 1 pcs$0.43517
  • 500 pcs$0.43301

Nambari ya Sehemu:
IRFD224
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 250V 630MA 4-DIP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Viwango - Zener - Moja, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Transistors - Ushirikiano uliopangwa, Thyristors - SCRs - Moduli and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix IRFD224 electronic components. IRFD224 can be shipped within 24 hours after order. If you have any demands for IRFD224, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFD224 Sifa za Bidhaa

Nambari ya Sehemu : IRFD224
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 250V 630MA 4-DIP
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 250V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 630mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.1 Ohm @ 380mA, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 260pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : 4-DIP, Hexdip, HVMDIP
Kifurushi / Kesi : 4-DIP (0.300", 7.62mm)