IXFT23N80Q Bei (USD) [5380pcs Hisa]
- 1 pcs$8.85830
- Nambari ya Sehemu:
- IXFT23N80Q
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 800V 23A TO-268D3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Viwango - Bridge Rectifiers, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
- Faida ya Ushindani:
- We specialize in IXYS IXFT23N80Q electronic components. IXFT23N80Q can be shipped within 24 hours after order. If you have any demands for IXFT23N80Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT23N80Q Sifa za Bidhaa
Nambari ya Sehemu :
IXFT23N80Q
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 800V 23A TO-268D3
Mfululizo :
HiPerFET™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
23A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
420 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 3mA
Malango ya Lango (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4900pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
500W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-268
Kifurushi / Kesi :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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