DMN1019UVT-7 Bei (USD) [635766pcs Hisa]
- 1 pcs$0.05818
- 3,000 pcs$0.05240
- Nambari ya Sehemu:
- DMN1019UVT-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 12V 10.7A TSOT26.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Moduli za Dereva za Nguvu, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN1019UVT-7 electronic components. DMN1019UVT-7 can be shipped within 24 hours after order. If you have any demands for DMN1019UVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN1019UVT-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMN1019UVT-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 12V 10.7A TSOT26
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10.7A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.2V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
10 mOhm @ 9.7A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
50.4nC @ 8V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2588pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.73W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TSOT-26
Kifurushi / Kesi :
SOT-23-6 Thin, TSOT-23-6
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