ON Semiconductor - FDS6900AS

KEY Part #: K6522148

FDS6900AS Bei (USD) [203104pcs Hisa]

  • 1 pcs$0.18302
  • 2,500 pcs$0.18211

Nambari ya Sehemu:
FDS6900AS
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - Arrays, Transistors - JFETs, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDS6900AS electronic components. FDS6900AS can be shipped within 24 hours after order. If you have any demands for FDS6900AS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDS6900AS Sifa za Bidhaa

Nambari ya Sehemu : FDS6900AS
Mzalishaji : ON Semiconductor
Maelezo : MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
Mfululizo : PowerTrench®, SyncFET™
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.9A, 8.2A
Njia ya Kutumia (Max) @ Id, Vgs : 27 mOhm @ 6.9A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 15nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 600pF @ 15V
Nguvu - Max : 900mW
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji : 8-SOIC