NXP USA Inc. - IRF530N,127

KEY Part #: K6400317

[8863pcs Hisa]


    Nambari ya Sehemu:
    IRF530N,127
    Mzalishaji:
    NXP USA Inc.
    Maelezo ya kina:
    MOSFET N-CH 100V 17A TO220AB.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Arrays, Transistors - IGBTs - Moja, Viwango - Zener - Moja, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF, Transistors - JFETs and Thyristors - SCRs - Moduli ...
    Faida ya Ushindani:
    We specialize in NXP USA Inc. IRF530N,127 electronic components. IRF530N,127 can be shipped within 24 hours after order. If you have any demands for IRF530N,127, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF530N,127 Sifa za Bidhaa

    Nambari ya Sehemu : IRF530N,127
    Mzalishaji : NXP USA Inc.
    Maelezo : MOSFET N-CH 100V 17A TO220AB
    Mfululizo : TrenchMOS™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 100V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 17A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 110 mOhm @ 9A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 40nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 633pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 79W (Tc)
    Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : TO-220AB
    Kifurushi / Kesi : TO-220-3