SI8812DB-T2-E1 Bei (USD) [548287pcs Hisa]
- 1 pcs$0.06746
- 3,000 pcs$0.06372
- Nambari ya Sehemu:
- SI8812DB-T2-E1
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 20V MICROFOOT.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Viwango - Bridge Rectifiers and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI8812DB-T2-E1 electronic components. SI8812DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8812DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8812DB-T2-E1 Sifa za Bidhaa
Nambari ya Sehemu :
SI8812DB-T2-E1
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 20V MICROFOOT
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
-
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.2V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
59 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
17nC @ 8V
Vgs (Max) :
±5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Makala ya FET :
-
Kuondoa Nguvu (Max) :
500mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
4-Microfoot
Kifurushi / Kesi :
4-UFBGA
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