Infineon Technologies - IRLML2502TRPBF

KEY Part #: K6416858

IRLML2502TRPBF Bei (USD) [606179pcs Hisa]

  • 1 pcs$0.06102
  • 3,000 pcs$0.04542

Nambari ya Sehemu:
IRLML2502TRPBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 20V 4.2A SOT-23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF, Viwango - RF, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCRs - Moduli and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLML2502TRPBF Sifa za Bidhaa

Nambari ya Sehemu : IRLML2502TRPBF
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 20V 4.2A SOT-23
Mfululizo : HEXFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.2A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 45 mOhm @ 4.2A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 12nC @ 5V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 740pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.25W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : Micro3™/SOT-23
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3

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