Infineon Technologies - IPN60R2K1CEATMA1

KEY Part #: K6421323

IPN60R2K1CEATMA1 Bei (USD) [451118pcs Hisa]

  • 1 pcs$0.08199
  • 3,000 pcs$0.06763

Nambari ya Sehemu:
IPN60R2K1CEATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET NCH 600V 3.7A SOT223.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - IGBTs - Arrays, Moduli za Dereva za Nguvu, Viwango - Rectifiers - Moja, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Arrays and Viwango - Zener - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPN60R2K1CEATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPN60R2K1CEATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET NCH 600V 3.7A SOT223
Mfululizo : CoolMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.7A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.1 Ohm @ 800mA, 10V
Vgs (th) (Max) @ Id : 3.5V @ 60µA
Malango ya Lango (Qg) (Max) @ Vgs : 6.7nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 140pF @ 100V
Makala ya FET : Super Junction
Kuondoa Nguvu (Max) : 5W (Tc)
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-SOT223
Kifurushi / Kesi : SOT-223-3

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