Nambari ya Sehemu :
IPB80P04P405ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET P-CH TO263-3
Mfululizo :
Automotive, AEC-Q101, OptiMOS™
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
4.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
151nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
10300pF @ 25V
Kuondoa Nguvu (Max) :
125W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO263-3-2
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB