Infineon Technologies - BSP129H6327XTSA1

KEY Part #: K6399798

BSP129H6327XTSA1 Bei (USD) [244941pcs Hisa]

  • 1 pcs$0.15101
  • 1,000 pcs$0.13079

Nambari ya Sehemu:
BSP129H6327XTSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 240V 350MA SOT223.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Thyristors - TRIAC and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP129H6327XTSA1 Sifa za Bidhaa

Nambari ya Sehemu : BSP129H6327XTSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 240V 350MA SOT223
Mfululizo : SIPMOS®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 240V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 350mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 0V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 6 Ohm @ 350mA, 10V
Vgs (th) (Max) @ Id : 1V @ 108µA
Malango ya Lango (Qg) (Max) @ Vgs : 5.7nC @ 5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 108pF @ 25V
Makala ya FET : Depletion Mode
Kuondoa Nguvu (Max) : 1.8W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-SOT223-4
Kifurushi / Kesi : TO-261-4, TO-261AA

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